The fab process is derived from logic processing but the device layer is built on a high resistivity epitaxial layer instead of a highly doped layer
Sionyx has retargeted their technology for solar cells last I heard.
I think they had a huge dark current and non-uniformity problem if i remember correctly
Quote:
Originally Posted by rally
Thanks Richard,
I look forward to the day . . .
I have wondered what has happened to the commercialisation of SiOnyx's Black Silicon CMOS technology - promised the world but still seems after many years to be vapourware ?
You didn't mention the process in your paper for CMOS enhancements, so I wondered was that because your paper was earlier or more the case that the technology was more laboratory hype than commercially realistic ?
Afterall the results they claim are orders (many orders) of magnitude improvement over existing sensors.
That would certanly solve most of our problems !!
Just wondering ?
Cheers
Rally
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