gary
22-07-2011, 05:53 PM
The July 20011 edition of the Institute of Electrical & Electronic Engineers (IEEE)
Spectrum Magazine has an article by Joel E. Moore of the University of California,
Berkeley entitled "Topological Insulators".
On a personal note, I also found the article interesting because it mentions
during its introduction in several places both "modulation doping", which creates
a two-dimensional electron gas at the interface between two semiconductors of
different bandgaps and "quantum wells", both of which were discovered by my
previous boss.
Modulation doping is used in the ubiquitous High Electron Mobility Transistor (HEMT).
If you have a mobile phone, then you will have one in your pocket.
Article here -
http://spectrum.ieee.org/semiconductors/materials/topological-insulators
Spectrum Magazine has an article by Joel E. Moore of the University of California,
Berkeley entitled "Topological Insulators".
On a personal note, I also found the article interesting because it mentions
during its introduction in several places both "modulation doping", which creates
a two-dimensional electron gas at the interface between two semiconductors of
different bandgaps and "quantum wells", both of which were discovered by my
previous boss.
Modulation doping is used in the ubiquitous High Electron Mobility Transistor (HEMT).
If you have a mobile phone, then you will have one in your pocket.
Article here -
http://spectrum.ieee.org/semiconductors/materials/topological-insulators