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Anyway, apart from the too large footprint that MOSFET only works with 5V logic and we are using 3.3V. RDS climbs very steeply with VGS under 6V. From the datasheet I would guess it is 6mΩ for 5V.
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OK. Thanks. 3.3V - just curious and must have misread Brendan's post on this - thinking 10V, which didn't add up anyway. Can you point me to the data sheet for the device and a brief description of how the gate is being driven and the method of temperature control, if it's not too much trouble.
EDIT: Found it. Just finished reading the entire thread.